ES1F [BL Galaxy Electrical]

FAST RECOVERY RECTIFIER; 快速恢复整流
ES1F
型号: ES1F
厂家: BL Galaxy Electrical    BL Galaxy Electrical
描述:

FAST RECOVERY RECTIFIER
快速恢复整流

二极管 光电二极管 IOT 快速恢复二极管
文件: 总2页 (文件大小:58K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
GALAXY ELECTRICAL  
ES1F---ES1A  
BL  
VOLTAGE RANGE: 1500 --- 600 V  
CURRENT: 0.7 A  
FAST RECOVERY RECTIFIER  
FEATURES  
Low cost  
DO - 41  
Diffused junction  
Low leakage  
Low forward voltage drop  
High current capability  
Easilycleaned with Freon,Alcohol,Isopropanol  
and similar solvents  
The plastic material carries U/L recognition 94V-0  
MECHANICAL DATA  
Case:JEDEC DO-41,molded plastic  
Terminals: Axial lead ,solderable per  
MIL- STD-750,Method 2026  
Polarity: Color band denotes cathode  
Weight: 0.012 ounces,0.34 grams  
Mounting position: Any  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%.  
ES1F  
ES1Z  
ES1  
ES1A  
UNITS  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
1500  
1050  
1500  
200  
140  
200  
400  
280  
400  
600  
420  
600  
V
V
V
VRRM  
VRMS  
VDC  
Maximum DC blocking voltage  
Maximum average forw ard rectified current  
0.5  
0.7  
A
IF(AV)  
9.5mm lead length,  
@TA=75  
Peak forw ard surge current  
IFSM  
20.0  
2.0  
30.0  
A
8.3ms single half-sine-w ave  
superimposed on rated load @TJ=125  
Maximum instantaneous forw ard voltage  
@ 0.5/0.7A  
2.5  
5.0  
V
A
VF  
IR  
Maximum reverse current  
@TA=25  
10.0  
at rated DC blocking voltage @TA=100  
Maximum reverse recovery time (Note1)  
100.0  
350  
15  
ns  
trr  
Typical junction capacitance  
Typical thermal resistance  
(Note2)  
(Note3)  
pF  
CJ  
50  
Rθ  
/ W  
JA  
Operating junction temperature range  
-55----+150  
-55---- +150  
TJ  
Storage temperature range  
TSTG  
NOTE:1. Measured with IF=0.5A, IR=1A, Irr=0.25A.  
www.galaxycn.com  
2. Measured at 1.0MHz and applied rev erse voltage of 4.0V DC.  
3. Thermal resistance f rom junction to ambient.  
Document Number 0261063  
BLGALAXY ELECTRICAL  
1.  
RATINGS AND CHARACTERISTIC CURVES  
ES1F---ES1A  
FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM  
trr  
50  
10  
N.1.  
N.1.  
+0.5A  
D.U.T.  
(
- )  
0
(+)  
PULSE  
50VDC  
(APPROX)  
(-)  
GENERATOR  
(NOTE2)  
-0.25A  
OSCILLOSCOPE  
(NOTE 1)  
1
(
+ )  
N.1.  
-1.0A  
1cm  
NOTES: 1. RISETIME=7ns MAX. INPUTIMPEDANCE=1M . 22PF  
2. RISETIME=10ns MAX. SOURCEIMPEDANCE=50  
SETTIMEBASEFOR50/100 ns /cm  
FIG.2 -- FORWARD DERATING CURVE  
FIG.3 -- TYPICAL FORWARD CHARACTERISTIC  
100  
1.0  
10  
TJ=25  
Pulse Width=300µS  
ES1Z  
ES1  
ES1A  
4
0.8  
ES1F~  
ES1Z  
2
ES1F  
0.6  
1.0  
0.4  
ES1~  
0.4  
ES1A  
0.2  
Single Phase  
Half Wave 60Hz  
Resistive or  
0.1  
0.2  
Inductive Load  
0.06  
0.04  
0.02  
0.01  
0
0
25  
50  
75  
100  
125  
150  
1.0  
2.0  
3.0  
4.0  
5.0  
AMBIENT TEMPERATURE,  
INSTANTANEOUS FORWARD CURRENT, VOLTS  
FIG.4-- PEAK FORWARD SURGE CURRENT  
FIG.5-- TYPICAL JUNCTION CAPACITANCE  
100  
30  
60  
40  
20  
10  
20  
ES1Z  
ES1  
ES1A  
10  
4
TJ=25  
f=1MHz  
ES1F  
2
1
0
1
5
10  
50  
.1  
.2  
.4  
1.0  
2
4
10  
20  
40  
100  
NUMBER OF CYCLES AT60Hz  
REVERSE VOLTAGE,VOLTS  
www.galaxycn.com  
2.  
Document Number 0261063  
BLGALAXY ELECTRICAL  

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